掩模及其制造方法

Mask and method for manufacturing the same

Abstract

本发明提供了一种在曝光工艺中使用的掩模及其制造方法,该掩模包括:形成于光刻版衬底上方的主图样;形成于光刻版衬底上方且与主图样隔离开预定距离的多个虚拟图样;以及形成于多个虚拟图样中的至少一个上方的光屏蔽层。虚拟图样可以包括一个精细虚拟图样,该精细虚拟图样具有的分辨率等于或小于极限分辨率,以便在曝光工艺期间不在晶片上形成图样图像。
A mask for use in an exposure process and a method for manufacturing the same are provided, the mask including a main pattern formed over a reticle substrate; a plurality of dummy patterns formed overthe reticle substrate and spaced apart from the main pattern by a predetermined distance; and a light shielding layer formed over at least one of the plurality of dummy patterns. A dummy patterns mayinclude a fine dummy pattern having a resolution equal to or less than a limit resolution so as not to form a pattern image on a wafer during an exposure process.

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Cited By (2)

    Publication numberPublication dateAssigneeTitle
    CN-102799060-ANovember 28, 2012联华电子股份有限公司Dummy pattern and method for forming same
    US-9857677-B2January 02, 2018United Microelectronics Corp.Dummy patterns