Light-emitting diode and manufacturing method thereof

发光二极管及其制造方法

Abstract

本发明提出一种发光二极管及其工艺,其包含金属反射层,以提高光线在发光二极管内部的反射效率,同时也可降低电阻,降低功率损耗。另外,上述金属反射层与半导体之间还包含缓冲层,此缓冲层为金属与非金属透明介质的混合结构,以降低半导体与金属间的应力,减少晶粒崩裂的可能。
The invention provides a light-emitting diode and a process thereof. The light-emitting diode comprises a metal reflecting layer so as to improve the reflection efficiency of light in the light-emitting diode and simultaneously reduce resistance and power loss. Besides, a buffer layer is arranged between the metal reflecting layer and a semiconductor, and has a mixed structure of metal and a nonmetal transparent medium so as to reduce the stress between the semiconductor and the metal and decrease the possibility of grain collapse.

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Cited By (8)

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    CN-102222745-AOctober 19, 2011映瑞光电科技(上海)有限公司发光二极管及其制造方法
    CN-102244169-ANovember 16, 2011映瑞光电科技(上海)有限公司发光二极管及其制造方法
    CN-102983414-AMarch 20, 2013深圳光启创新技术有限公司反射阵列天线
    CN-102983414-BApril 16, 2014深圳光启创新技术有限公司Reflective plane of reflective array antenna
    CN-103515493-AJanuary 15, 2014隆达电子股份有限公司Manufacturing process of vertical type solid state light emitting device
    CN-103515493-BJune 08, 2016隆达电子股份有限公司垂直式固态发光元件的制作工艺
    US-9583839-B2February 28, 2017Kuang-Chi Innovative Technology Ltd.Reflective array surface and reflective array antenna
    WO-2014071866-A1May 15, 2014深圳光启创新技术有限公司Surface de réseau réfléchissante et antenne réseau réfléchissante